Квантово-розмiрнi осциляцiйнi ефекти термоелектричних параметрiв у наноструктурах халькогенiдiв свинцю
On the basis of the theoretical model of a quantum well (QW) with infinitely high walls, we study the thermoelectric parameters depending on the thickness of the layer of nanostructures IV–VI (PbS, PbSe, PbTe) in the approximation of changing Fermi energy. It is shown that the dependences of the See...
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| Дата: | 2018 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English Ukrainian |
| Опубліковано: |
Publishing house "Academperiodika"
2018
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| Теми: | |
| Онлайн доступ: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018426 |
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| Назва журналу: | Ukrainian Journal of Physics |
Репозитарії
Ukrainian Journal of Physics| Резюме: | On the basis of the theoretical model of a quantum well (QW) with infinitely high walls, we study the thermoelectric parameters depending on the thickness of the layer of nanostructures IV–VI (PbS, PbSe, PbTe) in the approximation of changing Fermi energy. It is shown that the dependences of the Seebeck coefficient, electrical conductivity, and thermoelectric power factor on the well width for nanofilms of lead chalcogenides are in good agreement with the experimental data. This proves the correctness of the used model. |
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