Механiзми розсiювання носiїв заряду у термоелектричному PbTe:Sb

On the basis of the results of radiographic researches and measurements of thermoelectric parameters of antimony-doped lead telluride, such as the thermoelectric coefficient and the conductivity, the penetration mechanisms of impurity atoms into the crystal lattice of the matrix are established. The...

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Збережено в:
Бібліографічні деталі
Дата:2018
Автори: Freik, D. M., Mudryi, S. I., Gorichok, I. V., Dzumedzey, R. O., Krynytskyi, O. S., Lyuba, T. S.
Формат: Стаття
Мова:English
Ukrainian
Опубліковано: Publishing house "Academperiodika" 2018
Теми:
Онлайн доступ:https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018498
Теги: Додати тег
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Назва журналу:Ukrainian Journal of Physics

Репозитарії

Ukrainian Journal of Physics
Опис
Резюме:On the basis of the results of radiographic researches and measurements of thermoelectric parameters of antimony-doped lead telluride, such as the thermoelectric coefficient and the conductivity, the penetration mechanisms of impurity atoms into the crystal lattice of the matrix are established. The influence of impurity on the charge carrier mobility is revealed. The introduction of impurities up to 0.3 at.% is shown to favor the electron mobility owing to thefilling of tellurium vacancies, which are active scattering centers, by antimony ions, the effect of which on the electron mobility is lower.