2025-02-21T07:06:50-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22ujp2-article-2018501%22&qt=morelikethis&rows=5
2025-02-21T07:06:50-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22ujp2-article-2018501%22&qt=morelikethis&rows=5
2025-02-21T07:06:50-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-21T07:06:50-05:00 DEBUG: Deserialized SOLR response
Ефекти просторового переносу носiїв заряду в гетероструктурах n-AlGaAs/GaAs з дельта-шарами домiшки в бар’єрах

Ефекти просторового переносу носiїв заряду в гетероструктурах n-AlGaAs/GaAs з дельта-шарами домiшки в бар’єрах

The results of investigations of the electric and magnetic transport phenomena of charge carriers in the heterostructures with quantum wells and impurity delta-layers in adjacent barriers are reviewed and analyzed. The positive magnetoresistance observed at low temperatures (T &lt; 20 K) and the...

Full description

Saved in:
Bibliographic Details
Main Authors: Vainberg, V. V., Pylypchuk, A. S., Poroshin, V. N., Sarbey, O. G.
Format: Article
Language:English
Published: Publishing house "Academperiodika" 2018
Subjects:
heterostructures
quantum wells
lateral conduction
magnetoresistance
delta doping
Online Access:https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018501
Tags: Add Tag
No Tags, Be the first to tag this record!
id ujp2-article-2018501
record_format ojs
spelling ujp2-article-20185012019-03-31T08:25:52Z Effects of the Real-Space Transfer of Charge Carriers in the n-AlGaAs/GaAs Heterostructures with the Delta-Layers of Impurity in the Barriers Ефекти просторового переносу носiїв заряду в гетероструктурах n-AlGaAs/GaAs з дельта-шарами домiшки в бар’єрах Vainberg, V. V. Pylypchuk, A. S. Poroshin, V. N. Sarbey, O. G. heterostructures quantum wells lateral conduction magnetoresistance delta doping The results of investigations of the electric and magnetic transport phenomena of charge carriers in the heterostructures with quantum wells and impurity delta-layers in adjacent barriers are reviewed and analyzed. The positive magnetoresistance observed at low temperatures (T &lt; 20 K) and the dependence of the charge carrier mobility on the impurity concentration in the delta layers are related to the transport of carriers via two parallel channels with different mobilities, which are the channels formed by the structural and delta-layer quantum wells. The non-linear dependence of the current on the applied electric field strength is explained by the field-induced redistribution of charge carriers between these channels. Приведено та проаналiзовано результати дослiдження електричного на магнiтного транспорту носiїв заряду в гетероструктурах з квантовими ямами i домiшковими дельта-шарами в прилеглих бар’єрах. Додатний магнiтоопiр i вигляд залежностi рухливостi носiїв вiд концентрацiї домiшки в дельта шарах, при низьких температурах (T &lt; 20 K), пов’язуються з транспортом носiїв по двох паралельних каналах з рiзною рухливiстю носiїв: структурним i утвореними дельта-шарами домiшки квантовим ямам. Нелiнiйна залежнiсть струму вiд величини прикладеного електричного поля пояснюється зумовленим полем перерозподiлом носiїв мiж цими каналами. Publishing house "Academperiodika" 2018-10-24 Article Article Peer-reviewed Рецензована стаття application/pdf https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018501 10.15407/ujpe59.07.0721 Ukrainian Journal of Physics; Vol. 59 No. 7 (2014); 721 Український фізичний журнал; Том 59 № 7 (2014); 721 2071-0194 2071-0186 10.15407/ujpe59.07 en https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018501/528 Copyright (c) 2018 Bogolyubov Institute for Theoretical Physics, National Academy of Sciences of Ukraine
institution Ukrainian Journal of Physics
collection OJS
language English
topic heterostructures
quantum wells
lateral conduction
magnetoresistance
delta doping
spellingShingle heterostructures
quantum wells
lateral conduction
magnetoresistance
delta doping
Vainberg, V. V.
Pylypchuk, A. S.
Poroshin, V. N.
Sarbey, O. G.
Ефекти просторового переносу носiїв заряду в гетероструктурах n-AlGaAs/GaAs з дельта-шарами домiшки в бар’єрах
topic_facet heterostructures
quantum wells
lateral conduction
magnetoresistance
delta doping
format Article
author Vainberg, V. V.
Pylypchuk, A. S.
Poroshin, V. N.
Sarbey, O. G.
author_facet Vainberg, V. V.
Pylypchuk, A. S.
Poroshin, V. N.
Sarbey, O. G.
author_sort Vainberg, V. V.
title Ефекти просторового переносу носiїв заряду в гетероструктурах n-AlGaAs/GaAs з дельта-шарами домiшки в бар’єрах
title_short Ефекти просторового переносу носiїв заряду в гетероструктурах n-AlGaAs/GaAs з дельта-шарами домiшки в бар’єрах
title_full Ефекти просторового переносу носiїв заряду в гетероструктурах n-AlGaAs/GaAs з дельта-шарами домiшки в бар’єрах
title_fullStr Ефекти просторового переносу носiїв заряду в гетероструктурах n-AlGaAs/GaAs з дельта-шарами домiшки в бар’єрах
title_full_unstemmed Ефекти просторового переносу носiїв заряду в гетероструктурах n-AlGaAs/GaAs з дельта-шарами домiшки в бар’єрах
title_sort ефекти просторового переносу носiїв заряду в гетероструктурах n-algaas/gaas з дельта-шарами домiшки в бар’єрах
title_alt Effects of the Real-Space Transfer of Charge Carriers in the n-AlGaAs/GaAs Heterostructures with the Delta-Layers of Impurity in the Barriers
description The results of investigations of the electric and magnetic transport phenomena of charge carriers in the heterostructures with quantum wells and impurity delta-layers in adjacent barriers are reviewed and analyzed. The positive magnetoresistance observed at low temperatures (T &lt; 20 K) and the dependence of the charge carrier mobility on the impurity concentration in the delta layers are related to the transport of carriers via two parallel channels with different mobilities, which are the channels formed by the structural and delta-layer quantum wells. The non-linear dependence of the current on the applied electric field strength is explained by the field-induced redistribution of charge carriers between these channels.
publisher Publishing house "Academperiodika"
publishDate 2018
url https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018501
work_keys_str_mv AT vainbergvv effectsoftherealspacetransferofchargecarriersinthenalgaasgaasheterostructureswiththedeltalayersofimpurityinthebarriers
AT pylypchukas effectsoftherealspacetransferofchargecarriersinthenalgaasgaasheterostructureswiththedeltalayersofimpurityinthebarriers
AT poroshinvn effectsoftherealspacetransferofchargecarriersinthenalgaasgaasheterostructureswiththedeltalayersofimpurityinthebarriers
AT sarbeyog effectsoftherealspacetransferofchargecarriersinthenalgaasgaasheterostructureswiththedeltalayersofimpurityinthebarriers
AT vainbergvv efektiprostorovogoperenosunosiívzarâduvgeterostrukturahnalgaasgaaszdelʹtašaramidomiškivbarêrah
AT pylypchukas efektiprostorovogoperenosunosiívzarâduvgeterostrukturahnalgaasgaaszdelʹtašaramidomiškivbarêrah
AT poroshinvn efektiprostorovogoperenosunosiívzarâduvgeterostrukturahnalgaasgaaszdelʹtašaramidomiškivbarêrah
AT sarbeyog efektiprostorovogoperenosunosiívzarâduvgeterostrukturahnalgaasgaaszdelʹtašaramidomiškivbarêrah
first_indexed 2023-03-24T08:56:00Z
last_indexed 2023-03-24T08:56:00Z
_version_ 1795757627911700480

Similar Items