2025-02-21T07:08:50-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22ujp2-article-2018501%22&qt=morelikethis&rows=5
2025-02-21T07:08:50-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22ujp2-article-2018501%22&qt=morelikethis&rows=5
2025-02-21T07:08:50-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-21T07:08:50-05:00 DEBUG: Deserialized SOLR response
Ефекти просторового переносу носiїв заряду в гетероструктурах n-AlGaAs/GaAs з дельта-шарами домiшки в бар’єрах

Ефекти просторового переносу носiїв заряду в гетероструктурах n-AlGaAs/GaAs з дельта-шарами домiшки в бар’єрах

The results of investigations of the electric and magnetic transport phenomena of charge carriers in the heterostructures with quantum wells and impurity delta-layers in adjacent barriers are reviewed and analyzed. The positive magnetoresistance observed at low temperatures (T &lt; 20 K) and the...

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Bibliographic Details
Main Authors: Vainberg, V. V., Pylypchuk, A. S., Poroshin, V. N., Sarbey, O. G.
Format: Article
Language:English
Published: Publishing house "Academperiodika" 2018
Subjects:
heterostructures
quantum wells
lateral conduction
magnetoresistance
delta doping
Online Access:https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018501
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2025-02-21T07:08:50-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&rows=40&rows=5&wt=json&json.nl=arrarr&q=id%3A%22ujp2-article-2018501%22&qt=morelikethis
2025-02-21T07:08:50-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&rows=40&rows=5&wt=json&json.nl=arrarr&q=id%3A%22ujp2-article-2018501%22&qt=morelikethis
2025-02-21T07:08:50-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-21T07:08:50-05:00 DEBUG: Deserialized SOLR response

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