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Ефекти просторового переносу носiїв заряду в гетероструктурах n-AlGaAs/GaAs з дельта-шарами домiшки в бар’єрах

The results of investigations of the electric and magnetic transport phenomena of charge carriers in the heterostructures with quantum wells and impurity delta-layers in adjacent barriers are reviewed and analyzed. The positive magnetoresistance observed at low temperatures (T < 20 K) and...

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Bibliographic Details
Date:2018
Main Authors: Vainberg, V. V., Pylypchuk, A. S., Poroshin, V. N., Sarbey, O. G.
Format: Article
Language:English
Published: Publishing house "Academperiodika" 2018
Online Access:https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018501
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Journal Title:Ukrainian Journal of Physics

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Ukrainian Journal of Physics

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