Ефекти просторового переносу носiїв заряду в гетероструктурах n-AlGaAs/GaAs з дельта-шарами домiшки в бар’єрах
The results of investigations of the electric and magnetic transport phenomena of charge carriers in the heterostructures with quantum wells and impurity delta-layers in adjacent barriers are reviewed and analyzed. The positive magnetoresistance observed at low temperatures (T < 20 K) and the...
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| Date: | 2018 |
|---|---|
| Main Authors: | Vainberg, V. V., Pylypchuk, A. S., Poroshin, V. N., Sarbey, O. G. |
| Format: | Article |
| Language: | English |
| Published: |
Publishing house "Academperiodika"
2018
|
| Online Access: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018501 |
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| Journal Title: | Ukrainian Journal of Physics |
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