Ефекти просторового переносу носiїв заряду в гетероструктурах n-AlGaAs/GaAs з дельта-шарами домiшки в бар’єрах

• Datum: 2018
• Hauptverfasser: Vainberg, V. V., Pylypchuk, A. S., Poroshin, V. N., Sarbey, O. G.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Publishing house "Academperiodika" 2018
• Online Zugang: https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018501
• Назва журналу: Ukrainian Journal of Physics

The results of investigations of the electric and magnetic transport phenomena of charge carriers in the heterostructures with quantum wells and impurity delta-layers in adjacent barriers are reviewed and analyzed. The positive magnetoresistance observed at low temperatures (T < 20 K) and the...