Ефекти просторового переносу носiїв заряду в гетероструктурах n-AlGaAs/GaAs з дельта-шарами домiшки в бар’єрах

• Date: 2018
• Main Authors: Vainberg, V. V., Pylypchuk, A. S., Poroshin, V. N., Sarbey, O. G.
• Format: Article
• Language: English
• Published: Publishing house "Academperiodika" 2018
• Online Access: https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018501
• Journal Title: Ukrainian Journal of Physics

The results of investigations of the electric and magnetic transport phenomena of charge carriers in the heterostructures with quantum wells and impurity delta-layers in adjacent barriers are reviewed and analyzed. The positive magnetoresistance observed at low temperatures (T < 20 K) and the...