Спектр та оптична контрастнiсть оксидованого гребiнчатого кремнiєвого фотонного кристала
A typical oxidized ternary photonic crystal – A/B/A/C N-periodic structure – is investigated analytically and numerically in the framework of the transfer matrix formalism. The influence of the oxidation on photonic gaps and the positions of perfect reflection areas for (SiO2/Si/SiO2/Air)N ...
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| Datum: | 2018 |
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| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Publishing house "Academperiodika"
2018
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| Online Zugang: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018534 |
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| Назва журналу: | Ukrainian Journal of Physics |
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Ukrainian Journal of Physics| Zusammenfassung: | A typical oxidized ternary photonic crystal – A/B/A/C N-periodic structure – is investigated analytically and numerically in the framework of the transfer matrix formalism. The influence of the oxidation on photonic gaps and the positions of perfect reflection areas for (SiO2/Si/SiO2/Air)N structure is calculated with regard for a transformation of the widths of silicon oxide layers. It is shown that the intrinsic optical contrastivity has a non-monotone behavior during the process of oxidation of silicon in the case of p-polarized electromagnetic waves. The found results will allow one to determine the optimal regimes of oxidation to obtain the needed optical properties of a photonic material. |
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