Спектр та оптична контрастнiсть оксидованого гребiнчатого кремнiєвого фотонного кристала

A typical oxidized ternary photonic crystal – A/B/A/C N-periodic structure – is investigated analytically and numerically in the framework of the transfer matrix formalism. The influence of the oxidation on photonic gaps and the positions of perfect reflection areas for (SiO2/Si/SiO2/Air)N ...

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Bibliographic Details
Date:2018
Main Author: Glushko, E. Ya.
Format: Article
Language:English
Published: Publishing house "Academperiodika" 2018
Online Access:https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018534
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Journal Title:Ukrainian Journal of Physics

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Ukrainian Journal of Physics
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Summary:A typical oxidized ternary photonic crystal – A/B/A/C N-periodic structure – is investigated analytically and numerically in the framework of the transfer matrix formalism. The influence of the oxidation on photonic gaps and the positions of perfect reflection areas for (SiO2/Si/SiO2/Air)N structure is calculated with regard for a transformation of the widths of silicon oxide layers. It is shown that the intrinsic optical contrastivity has a non-monotone behavior during the process of oxidation of silicon in the case of p-polarized electromagnetic waves. The found results will allow one to determine the optimal regimes of oxidation to obtain the needed optical properties of a photonic material.