Вплив телуру на деградацiйну стiйкiсть кристалiв напiвiзолюючого арсенiду галiю
Initial untreated crystals of semiinsulating tellurium-compensated GaAs are shown to degrade considerably less after HF treatments in comparison with the corresponding specimens doped with chrome, which testifies to a substantial influence of the compensating impurity type on the substance degradati...
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| Date: | 2018 |
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| Main Authors: | , , , , , , |
| Format: | Article |
| Language: | English Ukrainian |
| Published: |
Publishing house "Academperiodika"
2018
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| Subjects: | |
| Online Access: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018552 |
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| Journal Title: | Ukrainian Journal of Physics |
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Ukrainian Journal of Physics| Summary: | Initial untreated crystals of semiinsulating tellurium-compensated GaAs are shown to degrade considerably less after HF treatments in comparison with the corresponding specimens doped with chrome, which testifies to a substantial influence of the compensating impurity type on the substance degradation stability. Semiinsulating tellurium-compensated GaAs crystals preliminary treated in hydrogen plasma are also found to have higher degradation stability withrespect to the action of long-term high-frequency and microwave treatments in comparison with raw crystals. |
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