Лазерно-стимульоване збiльшення вiдбиваючої здатностi монокристалiчного n-GaAs(100)

• Видавець: Publishing house "Academperiodika"
• Дата: 2018
• Автори: Gentsar, P. O., Vlasenko, O. I., Levytskyi, S. M.
• Формат: Стаття
• Мова: English; Ukrainian
• Опубліковано: Publishing house "Academperiodika" 2018
• Теми: n-GaAs(100); лазерне опромiнення; спектри вiдбиття; показник заломлення; приповерхневий шар; laser irradiation; reflection spectra; refractive index; near-surface layer; -
• Онлайн доступ: https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018608

The results of optical researches concerning the reflection spectra of n-GaAs(100) single crystals with a specific resistance of 10 Ωcm (at room temperature) measured in a light wave-length interval of 0.2–1.7 мm before and after the laser irradiation to an energy dose of 66–108 mJ/cm2 are reported. The experiment revealed a growth in the reflectance of the examined crystals after their laser treatment. This integral effect is explained as a result of the difference between the optical characteristics (the complex refractive index) in the near-surface layer and in the bulk of the irradiated material.