2025-02-21T08:54:53-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22ujp2-article-2018718%22&qt=morelikethis&rows=5
2025-02-21T08:54:53-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22ujp2-article-2018718%22&qt=morelikethis&rows=5
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Електричнi властивостi оксидокремнiєвих гетероструктур на основi поруватого кремнiю

Електричнi властивостi оксидокремнiєвих гетероструктур на основi поруватого кремнiю

The processes of charge-carrier transport and relaxation in silicon-oxide heterostructures based on porous silicon have been studied, by using voltammetric measurements and thermoactivation spectroscopy. The temperature dependences of the conductivity in experimental structures are measured in an in...

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Bibliographic Details
Main Authors: Olenych, I. B., Monastyrskyi, L. S., Koman, B. P.
Format: Article
Language:English
Ukrainian
Published: Publishing house "Academperiodika" 2018
Subjects:
поруватий кремнiй
плiвка оксиду кремнiю
ВАХ
енергiя активацiї електропровiдностi
термостимульована деполяризацiя
porous silicon
silicon-oxide film
current-voltage characteristic
conductivity activation energy
thermally stimulated depolarization
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Online Access:https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018718
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Summary:The processes of charge-carrier transport and relaxation in silicon-oxide heterostructures based on porous silicon have been studied, by using voltammetric measurements and thermoactivation spectroscopy. The temperature dependences of the conductivity in experimental structures are measured in an interval of 80–325 K, and the activation energy of the electrical conductivity is determined. On the basis of the temperature dependences obtained for the depolarization current, the energy distribution of localized electron states, which affect the charge transport processes, is calculated. The influence of coating the porous silicon layer with a thin SiOx film on the electrical properties of the layer is analyzed. The obtained results extend the application scope of silicon-oxide nanosystems.

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