Електричнi властивостi оксидокремнiєвих гетероструктур на основi поруватого кремнiю
The processes of charge-carrier transport and relaxation in silicon-oxide heterostructures based on porous silicon have been studied, by using voltammetric measurements and thermoactivation spectroscopy. The temperature dependences of the conductivity in experimental structures are measured in an in...
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| Datum: | 2018 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | English Ukrainian |
| Veröffentlicht: |
Publishing house "Academperiodika"
2018
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| Schlagworte: | |
| Online Zugang: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018718 |
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| Назва журналу: | Ukrainian Journal of Physics |