Дослiдження методами ІЧ-спектроскопiї тонких плiвок оксиду цинку, вирощених методом АПО

Using the IR reflection method and the modified method of disturbed total internal reflection (DTIR), thin undoped conducting ZnO films grown with the use of the atomic layer deposition method have been studied theoretically and experimentally for the first time in a spectral interval of 400–1400 cm...

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Bibliographische Detailangaben
Datum:2019
Hauptverfasser: Venger, E. F., Melnichuk, L. Yu., Melnichuk, A. V., Semikina, T. V.
Format: Artikel
Sprache:English
Ukrainian
Veröffentlicht: Publishing house "Academperiodika" 2019
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Online Zugang:https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019006
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Назва журналу:Ukrainian Journal of Physics

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Ukrainian Journal of Physics
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Zusammenfassung:Using the IR reflection method and the modified method of disturbed total internal reflection (DTIR), thin undoped conducting ZnO films grown with the use of the atomic layer deposition method have been studied theoretically and experimentally for the first time in a spectral interval of 400–1400 cm−1. The parameters of ZnO films determined from the IR reflection spectra testify to the presence of frequency “windows” in the DTIR spectra, in which surface phonon and plasmon-phonon polaritons are excited. The theoretical calculations are in good agreement with the experimental results. The dispersion dependences of high- and low-frequency branches of DTIR spectra are plotted and analyzed.