Поляризацiйнi залежностi фотоструму в p-GaAs
An expression for the spectral and temperature dependences of a photocurrent arising as a result of the linear photovoltaic effect in such semiconductors as gallium arsenide with the hole conduction has been derived. The photocurrent is shown to arise owing to the presence of terms with different pa...
Збережено в:
| Дата: | 2019 |
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| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Publishing house "Academperiodika"
2019
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| Онлайн доступ: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019015 |
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| Назва журналу: | Ukrainian Journal of Physics |
Репозитарії
Ukrainian Journal of Physics| Резюме: | An expression for the spectral and temperature dependences of a photocurrent arising as a result of the linear photovoltaic effect in such semiconductors as gallium arsenide with the hole conduction has been derived. The photocurrent is shown to arise owing to the presence of terms with different parities in the effective hole Hamiltonian. Theoretical and experimental results have been compared. |
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