Вплив легування атомами Cu, Sn і In на оптичнi властивостi монокристалiв AgGaGe3Se8
The optical properties of AgGaGe3Se8 single crystals doped with Cu, In, and Sn atoms have been studied. A physical model is proposed for those compounds, which are wide-gap semiconductors (Eg ≈ 2.09–2.15 eV at T = 300 K) with the p-type conductivity, and whose optical parameters depend on the dopant...
Gespeichert in:
| Datum: | 2019 |
|---|---|
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Publishing house "Academperiodika"
2019
|
| Online Zugang: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019063 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Ukrainian Journal of Physics |