Вплив легування атомами Cu, Sn і In на оптичнi властивостi монокристалiв AgGaGe3Se8

• Дата: 2019
• Автори: Krymus, A. S., Myronchuk, G. L., Parasyuk, O. V.
• Формат: Стаття
• Мова: English
• Опубліковано: Publishing house "Academperiodika" 2019
• Теми: chalcogenide crystals; optical properties; Urbach energy; -
• Онлайн доступ: https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019063
• Назва журналу: Ukrainian Journal of Physics

The optical properties of AgGaGe3Se8 single crystals doped with Cu, In, and Sn atoms have been studied. A physical model is proposed for those compounds, which are wide-gap semiconductors (Eg ≈ 2.09–2.15 eV at T = 300 K) with the p-type conductivity, and whose optical parameters depend on the dopant...