Вплив легування атомами Cu, Sn і In на оптичнi властивостi монокристалiв AgGaGe3Se8
The optical properties of AgGaGe3Se8 single crystals doped with Cu, In, and Sn atoms have been studied. A physical model is proposed for those compounds, which are wide-gap semiconductors (Eg ≈ 2.09–2.15 eV at T = 300 K) with the p-type conductivity, and whose optical parameters depend on the dopant...
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| Date: | 2019 |
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| Main Authors: | , , |
| Format: | Article |
| Language: | English |
| Published: |
Publishing house "Academperiodika"
2019
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| Online Access: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019063 |
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| Journal Title: | Ukrainian Journal of Physics |