Пропозицiя структури графен/Ge(111) на основi дослiдження методом скануючої тунельної мiкроскопiї у надвисокому вакуумi
We report on the 5.5√3 × 5.5√3 − R30 ∘ overlayer superstructure observed by the scanning tunneling microscopy on the Ge(111) surface. It shows pronounced effects of the local density of states leading to the strong dependence of STM images on the bias voltage and some dynamic changes of images at 30...
Збережено в:
| Дата: | 2019 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English Ukrainian |
| Опубліковано: |
Publishing house "Academperiodika"
2019
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| Теми: | |
| Онлайн доступ: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019131 |
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| Назва журналу: | Ukrainian Journal of Physics |
Репозитарії
Ukrainian Journal of Physics| Резюме: | We report on the 5.5√3 × 5.5√3 − R30 ∘ overlayer superstructure observed by the scanning tunneling microscopy on the Ge(111) surface. It shows pronounced effects of the local density of states leading to the strong dependence of STM images on the bias voltage and some dynamic changes of images at 300 K. This overlayer is tentatively interpreted as graphene formed in small submonolayer amounts due to the pyrolysis of hydrocarbon constituents of the residual atmosphere of the vacuum chamber during the annealing of a Ge(111) sample at 900 K. We suggest a model of the graphene/Ge(111)-5.5√3 × 5.5√3 − R30 ∘ heteroepitaxial interface, featuring the reconstructed Ge(111) substrate with no long-range order under the graphene layer, the latter being corrugated due to spatial variations of the interatomic geometry of the Ge(111) and graphene(0001) atomic lattices with extremely large mismatch. |
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