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Розрахунок енергiї iонiзацiї основного стану мiлких донорiв в Δ1-моделi зони провiдностi монокристалiв n-Ge

Розрахунок енергiї iонiзацiї основного стану мiлких донорiв в Δ1-моделi зони провiдностi монокристалiв n-Ge

On the basis of the Ritz variational method, the ionization energies for the ground states of Sb, P, and As donors in n-Ge single crystals are calculated in the framework of the Δ1-model for the conduction band and taking the dispersion law anisotropy and the chemical shift into account. A compariso...

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Bibliographic Details
Main Authors: Luniov, S. V., Burban, O. V., Nazarchuk, P. F.
Format: Article
Language:English
Ukrainian
Published: Publishing house "Academperiodika" 2019
Subjects:
варiацiйний метод Рiтца
хiмiчний зсув
Δ1-мiнiмум
фактор анiзотропiї
Ritz variational method
chemical shift
Δ1-minimum
anisotropy factor
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Online Access:https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019159
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Summary:On the basis of the Ritz variational method, the ionization energies for the ground states of Sb, P, and As donors in n-Ge single crystals are calculated in the framework of the Δ1-model for the conduction band and taking the dispersion law anisotropy and the chemical shift into account. A comparison of theoretical results with corresponding experimental data shows that the model of impurity’s Coulomb potential can be used as a rough approximation only for Sbimpurities in Ge, making no allowance for the chemical shift. For the P and As impurities, when the potential field of an impurity ion is not Coulombic, the calculations have to be carried out with regard for a chemical shift.

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