Взаємодiя кисню та гадолiнiю з Si(100)-2 × 1. Утворення системи з роботою виходу 1 еВ
Changes in the electronic properties of the Si(100) surface, when a multilayer structure of oxidized Gd atoms is created on it, have been studied, by using the electron spectroscopy methods. It is shown that, after a number of adsorption cycles of Gd and oxygen atoms on the Si(100)-2×1 surface at ro...
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| Datum: | 2019 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | English Ukrainian |
| Veröffentlicht: |
Publishing house "Academperiodika"
2019
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| Schlagworte: | |
| Online Zugang: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019268 |
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| Назва журналу: | Ukrainian Journal of Physics |
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Ukrainian Journal of Physics| Zusammenfassung: | Changes in the electronic properties of the Si(100) surface, when a multilayer structure of oxidized Gd atoms is created on it, have been studied, by using the electron spectroscopy methods. It is shown that, after a number of adsorption cycles of Gd and oxygen atoms on the Si(100)-2×1 surface at room temperature and the annealing of the obtained structure at 600 ∘C, the work function decreases from 4.8 to less than 1 eV. The work function reduction at larger numbers of processing cycles is shown to be accompanied by the oxidation of Gd and Si atoms and a gradual decrease of the Si concentration in the near-surface region. The obtained results are explained by the formation of an O–Gd dipole layer on the surface. |
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