Неохолоджуванi оптоелектроннi прилади на основi напiвпровiдника HgCdTe у широкому спектральному дiапазонi
Issues associated with the development and the exploitation of infrared (IR) and sub-terahertz (THz) radiation detectors based on HgCdTe semiconductor are discussed. It is shown that this mercury cadmium telluride (MCT) semiconductor can be applied to the development of bi-colour detectors operating...
Gespeichert in:
| Datum: | 2019 |
|---|---|
| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
Publishing house "Academperiodika"
2019
|
| Online Zugang: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019270 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Ukrainian Journal of Physics |