Вплив доменної структури сегнетоелектричної пiдкладки на провiднiсть графену

• Дата: 2019
• Автор: Kurchak, A. I.
• Формат: Стаття
• Мова: English
• Опубліковано: Publishing house "Academperiodika" 2019
• Теми: -; graphene-on-ferroelectric; domain structure; conductance; field effect transistor
• Онлайн доступ: https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019659
• Назва журналу: Ukrainian Journal of Physics

The review is devoted to the recent theoretical studies of the impact of the domain structure of a ferroelectric substrate on the graphene conductance. An analytical description of the hysteresis memory effect in a field effect transistor based on graphene-on-ferroelectric, taking into account absor...