Дослідження пасток в гетероструктурах AlGaN/GaN ультразвуковими коливаннями

• Дата: 2021
• Автори: Kaliuzhnyi, V.V., Liubchenko, O.I., Tymochko, M.D., Olikh, Y.M., Kladko, V.P., Belyaev, A.E.
• Формат: Стаття
• Мова: English
• Опубліковано: Publishing house "Academperiodika" 2021
• Теми: electronic transport; heterostructure; 2DEG; gallium nitride; ultrasound; електронний транспорт; гетероструктура; двовимiрний електронний газ (2DEG); нiтрид галiю; ультразвук
• Онлайн доступ: https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2021137
• Назва журналу: Ukrainian Journal of Physics

A method of dynamic deformations has been proposed as a useful informative tool in the characterization of transportation properties of a two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructures. It is found that the exposing of a sample to ultrasonic vibrations results in the persistent acousto-conductivity (PAC) which was observed up to room temperatures. The PAC behaves itself like persistent photoconductivity (PPC), and the carrier density in the 2DEG channel is primarily contributed by the transfer of electrons excited from traps (like DX centers) as a result of their reconstruction under the ultrasonic loading.