2025-02-23T09:12:35-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: Query fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22ujp2-article-2021152%22&qt=morelikethis&rows=5
2025-02-23T09:12:35-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: => GET http://localhost:8983/solr/biblio/select?fl=%2A&wt=json&json.nl=arrarr&q=id%3A%22ujp2-article-2021152%22&qt=morelikethis&rows=5
2025-02-23T09:12:35-05:00 DEBUG: VuFindSearch\Backend\Solr\Connector: <= 200 OK
2025-02-23T09:12:35-05:00 DEBUG: Deserialized SOLR response
Морфологія та оптичні властивості нанокластерів Ge на окисленій поверхні Si(001)

Морфологія та оптичні властивості нанокластерів Ge на окисленій поверхні Si(001)

Germanium (Ge) nanoclusters are grown by the molecular-beam epitaxy technique on a chemically oxidized Si(100) surface at 700 ºC. X-ray diffraction and photocurrent spectroscopy demonstrate that the nanoclusters have the local structure of body-centered-tetragonal Ge, which exhibits an optical adsor...

Full description

Saved in:
Bibliographic Details
Main Authors: Lysenko, V.S., Kondratenko, S.V., Kozyrev, Yu.N., Rubezhanska, M.Yu., Kladko, V.P., Gomeniuk, Yu.V., Gudymenko, O.Y., Melnichuk, Ye.Ye., Grenet, G., Blanchard, N.B.
Format: Article
Language:Ukrainian
English
Published: Publishing house "Academperiodika" 2021
Subjects:
-
Online Access:https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2021152
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Germanium (Ge) nanoclusters are grown by the molecular-beam epitaxy technique on a chemically oxidized Si(100) surface at 700 ºC. X-ray diffraction and photocurrent spectroscopy demonstrate that the nanoclusters have the local structure of body-centered-tetragonal Ge, which exhibits an optical adsorptionedge at 0.48 eV at 50 K. Deposition of silicon on the surface with Ge nanoclusters leads to the surface reconstruction and the formation of a polycrystalline diamond-like Si coverage, while the nanoclusters core becomes a tetragonal SiGe alloy. The intrinsic absorption edge is shifted to 0.73 eV due to the Si–Ge intermixing. Possible mechanisms for nanoclusters growth are discussed.

Similar Items