Морфологія та оптичні властивості нанокластерів Ge на окисленій поверхні Si(001)
Germanium (Ge) nanoclusters are grown by the molecular-beam epitaxy technique on a chemically oxidized Si(100) surface at 700 ºC. X-ray diffraction and photocurrent spectroscopy demonstrate that the nanoclusters have the local structure of body-centered-tetragonal Ge, which exhibits an optical adsor...
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| Datum: | 2021 |
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| Hauptverfasser: | , , , , , , , , , |
| Format: | Artikel |
| Sprache: | Ukrainian English |
| Veröffentlicht: |
Publishing house "Academperiodika"
2021
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| Schlagworte: | |
| Online Zugang: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2021152 |
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| Назва журналу: | Ukrainian Journal of Physics |
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Ukrainian Journal of Physics| Zusammenfassung: | Germanium (Ge) nanoclusters are grown by the molecular-beam epitaxy technique on a chemically oxidized Si(100) surface at 700 ºC. X-ray diffraction and photocurrent spectroscopy demonstrate that the nanoclusters have the local structure of body-centered-tetragonal Ge, which exhibits an optical adsorptionedge at 0.48 eV at 50 K. Deposition of silicon on the surface with Ge nanoclusters leads to the surface reconstruction and the formation of a polycrystalline diamond-like Si coverage, while the nanoclusters core becomes a tetragonal SiGe alloy. The intrinsic absorption edge is shifted to 0.73 eV due to the Si–Ge intermixing. Possible mechanisms for nanoclusters growth are discussed. |
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