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Морфологія та оптичні властивості нанокластерів Ge на окисленій поверхні Si(001)

Germanium (Ge) nanoclusters are grown by the molecular-beam epitaxy technique on a chemically oxidized Si(100) surface at 700 ºC. X-ray diffraction and photocurrent spectroscopy demonstrate that the nanoclusters have the local structure of body-centered-tetragonal Ge, which exhibits an optical adsor...

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Bibliographic Details
Main Authors: Lysenko, V.S., Kondratenko, S.V., Kozyrev, Yu.N., Rubezhanska, M.Yu., Kladko, V.P., Gomeniuk, Yu.V., Gudymenko, O.Y., Melnichuk, Ye.Ye., Grenet, G., Blanchard, N.B.
Format: Article
Language:Ukrainian
English
Published: Publishing house "Academperiodika" 2021
Subjects:
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Online Access:https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2021152
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