Cover Image

Обернення хвильового фронту в InSb(Cu)

It is shown that the doping of narrow-band semiconductor InSb by copper leads to an enhancement of the phase conjugation efficiency at low intensities of laser radiation.

Saved in:

Bibliographic Details
Date:	2022
Main Authors:	Linnik, L.F., Linnik, L.G., Staryi, S.V.
Format:	Article
Language:	Ukrainian English
Published:	Publishing house "Academperiodika" 2022
Subjects:	-
Online Access:	https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2022088
Tags:	Add Tag No Tags, Be the first to tag this record!
Journal Title:	Ukrainian Journal of Physics

Institution

Ukrainian Journal of Physics

Similar Items

Chemical polishing of InAs, InSb, GaAs and GaSb
by: Levchenko, I.V., et al.
Published: (2017)

Laser – induced donor centers in p-InSb
by: Fedorenko, L., et al.
Published: (2000)

InSb Photodiodes (Review, Part I)
by: A. V. Sukach, et al.
Published: (2016)

InSb Photodiodes (Review, Part II)
by: A. V. Sukach, et al.
Published: (2016)

InSb фотодіоди (Огляд. Частина II)
by: Сукач, А.В., et al.
Published: (2016)

InSb фотодіоди (Огляд. Частина I)
by: Сукач, А.В., et al.
Published: (2016)

Quantization in magnetoresistance of strained InSb whiskers
by: A. Druzhinin, et al.
Published: (2019)

Berry phase in strained InSb whiskers
by: A. Druzhinin, et al.
Published: (2018)

Berry phase in strained InSb whiskers
by: Druzhinin, A., et al.
Published: (2018)

Quantization in magnetoresistance of strained InSb whiskers
by: Druzhinin, A., et al.
Published: (2019)

Recombination and trapping of excess carriers in n-InSb
by: V. V. Tetyorkin, et al.
Published: (2024)

Recombination and trapping of excess carriers in n-InSb
by: V. V. Tetyorkin, et al.
Published: (2024)

Trap-assisted conductivity in anodic oxide on InSb
by: G. V. Beketov, et al.
Published: (2017)

Trap-assisted conductivity in anodic oxide on InSb
by: Beketov, G.V., et al.
Published: (2017)

Trotsenko. InSb photodiodes (Review. Part III)
by: A. V. Sukach, et al.
Published: (2017)

Effect of thermal annealing on electrical and photoelectrical properties of n-InSb
by: Stariy, S.V., et al.
Published: (2017)

Рекомбінація та прилипання нерівноважних носіїв в n-InSb
by: Tetyorkin, V.V., et al.
Published: (2024)

Исследование спектров фотолюминесценции низкоразмерных структур InSb, сформированных в матрице GaSb
by: Andronova, E. V., et al.
Published: (2011)

Исследование спектров фотолюминесценции низкоразмерных структур InSb, сформированных в матрице GaSb
by: Андронова, Е.В., et al.
Published: (2011)

Использование квантовых точек InSb в термофотовольтаических преобразователях на основе GaSb
by: Андронова, Е.В., et al.
Published: (2003)

Polarization dependences of radiation emission by hot carriers in InSb
by: V. M. Bondar, et al.
Published: (2016)

Polarization dependences of radiation emission by hot carriers in InSb
by: V. M. Bondar, et al.
Published: (2016)

Calculation of absorption coefficients of InSb₁₋xBix solid solutions
by: Vyklyuk, J.I., et al.
Published: (2000)

Synthesis and properties of semiconductor solid solutions (inSb)₁₋x(CdTe)x
by: Venger, E.F., et al.
Published: (2006)

Effect of thermal annealing on electrical and photoelectrical properties of n-InSb
by: S. V. Stariy, et al.
Published: (2017)

Tunneling current via dislocations in InAs and InSb infrared photodiodes
by: A. V. Sukach, et al.
Published: (2011)

Tunneling current via dislocations in InAs and InSb infrared photodiodes
by: Sukach, A.V., et al.
Published: (2011)

Carrier transport mechanisms in InSb diffusion p-n junctions
by: A. Sukach, et al.
Published: (2014)

Carrier transport mechanisms in InSb diffusion p-n junctions
by: Sukach, A., et al.
Published: (2014)

Электрохимическое внедрение натрия и калия в InSb-, GaSb-электроды из щелочных растворов
by: Омельчук, А.А., et al.
Published: (2008)

Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures
by: Boltovets, N.S., et al.
Published: (2006)

Electrical properties of InSb p-n junctions prepared by diffusion methods
by: A. V. Sukach, et al.
Published: (2016)

Carrier transport mechanisms in reverse biased InSb p-n junctions
by: A. V. Sukach, et al.
Published: (2015)

Carrier transport mechanisms in reverse biased InSb p-n junctions
by: Sukach, A.V., et al.
Published: (2015)

Electrical properties of InSb p-n junctions prepared by diffusion methods
by: Sukach, A.V., et al.
Published: (2016)

Be-ion-implanted p-n InSb diode for infrared applications. Modeling, fabrication, and characterization
by: Korotyeyev, V.V., et al.
Published: (2018)

Электрохимическое окисление бинарного сплава InSb в кислых и щелочных электролитах
by: Ускова, Н.Н., et al.
Published: (2007)

Характеристики приемников излучения на основе InSb в условиях астрономического применения
by: Жиляев, Б.Е., et al.
Published: (1992)

S1/f noise and carrier transport mechanisms in InSb p + -n junctions
by: V. V. Tetyorkin, et al.
Published: (2018)

1/f noise and carrier transport mechanisms in InSb p⁺-n junctions
by: Tetyorkin, V.V., et al.
Published: (2018)