Cover Image

Фононні та поляронні стани циліндричних дротів ZnO/GaN та GaN/AlN

The energy of polarization phonons as a function of the wave vector as well as the polaron energy and effective mass as functions of the quantum wire radius R are determined for cylindrical quantum wires (QWs) of ZnO and GaN hexagonal crystals. It is shown that the dominant contribution to the polar...

Full description

Saved in:

Bibliographic Details
Date:	2022
Main Authors:	Boichuk, V.I., Voronyak, L.Ya., Voronyak, Ya.M.
Format:	Article
Language:	Ukrainian English
Published:	Publishing house "Academperiodika" 2022
Subjects:	-
Online Access:	https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2022092
Tags:	Add Tag No Tags, Be the first to tag this record!
Journal Title:	Ukrainian Journal of Physics

Institution

Ukrainian Journal of Physics

Similar Items

Current instabilities in resonant tunnelling diodes based on GaN/AlN heterojunctions
by: Belyaev, A.E., et al.
Published: (2004)

Resistance formation mechanisms for contacts and to n-AlN and n-GaN with a high dislocation density
by: A. V. Sachenko, et al.
Published: (2012)

Перспективы использования диодов Ганна на основе GaN, AlN и InN
by: Стороженко, И.П., et al.
Published: (2011)

Investigation of resistance formation mechanisms for contacts to n-AlN and n-GaN with a high dislocation density
by: Sachenko, A.V., et al.
Published: (2012)

Резонансно-туннельные диоды на основе нитридов AlN/AlxGa1-xN, GaN/InxGa1-xN
by: Боцула, О.В., et al.
Published: (2008)

Schottky-barrier Au–TiBx–n-GaN contacts
by: Ya. Kudryk
Published: (2015)

Investigation of traps in AlGaN/GaN heterostructures by ultrasonic vibrations
by: V. V. Kaliuzhnyi, et al.
Published: (2021)

Investigation of traps in AlGaN/GaN heterostructures by ultrasonic vibrations
by: V. V. Kaliuzhnyi, et al.
Published: (2021)

Effect of microwave radiation on I V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN
by: A. E. Belyaev, et al.
Published: (2013)

Effect of microwave radiation on I-V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN
by: Belyaev, A.E., et al.
Published: (2013)

Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs
by: A. G. Golenkov, et al.
Published: (2015)

Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs
by: Golenkov, A.G., et al.
Published: (2015)

Дослідження пасток в гетероструктурах AlGaN/GaN ультразвуковими коливаннями
by: Kaliuzhnyi, V.V., et al.
Published: (2021)

Оже-рекомбінація в полярних InGaN/GaN квантових ямах
by: Zinovchuk, A.V., et al.
Published: (2025)

Reduction of reverse leakage current at the TiO₂/GaN interface in field plate Ni/Au/-GaN Schottky diodes
by: Shashikala, B.N., et al.
Published: (2021)

Optical properties of irradiated epitaxial GaN films
by: Ye. Bieliaiev, et al.
Published: (2014)

Optical properties of irradiated epitaxial GaN films
by: A. E. Belyaev, et al.
Published: (2014)

The first principle calculation of electronic and optical properties of AlN, GaN and InN compounds under hydrostatic pressure
by: Berrah, S., et al.
Published: (2006)

Significance of DX-centers for acoustic induced reconstruction processes of defects in GaN/AlGaN
by: Ya. M. Olikh, et al.
Published: (2021)

Impact of proton irradiation on AlGaN/GaN transistors with high electron mobility
by: M. Bataev, et al.
Published: (2011)

Effect of neutron irradiation on characteristics of power InGaN/GaN light-emitting diodes
by: O. I. Vlasenko, et al.
Published: (2015)

Self-heating effects in AlGaN/GaN HEMT heterostructures: Electrical and optical characterization
by: A. V. Naumov, et al.
Published: (2015)

X-ray diffraction study of deformation state in InGaN/GaN multilayered structures
by: V. P. Kladko, et al.
Published: (2010)

Electro-optic effect in GaN/Al₀.₁₅Ga₀.₈₅N single quantum wells for optical switch
by: Elkadadra, A., et al.
Published: (2010)

Self-heating effects in AlGaN/GaN HEMT heterostructures: Electrical and optical characterization
by: Naumov, A.V., et al.
Published: (2015)

X-ray diffraction study of deformation state in InGaN/GaN multilayered structures
by: Kladko, V.P., et al.
Published: (2010)

Effect of the sapphire substrate on spectral emission features of LEDs based on InGaN/AlGaN/GaN heterostructures
by: Bletskan, D.I., et al.
Published: (2003)

Reflection coefficient and optical conductivity of gallium nitride GaN
by: J. O. Akinlami, et al.
Published: (2012)

Ultra-high field transport in GaN-based heterostructures
by: Vitusevich, S.A., et al.
Published: (2006)

Reflection coefficient and optical conductivity of gallium nitride GaN
by: Akinlami, J.O., et al.
Published: (2012)

Calculation of electron mobility and effect of dislocation scattering in GaN
by: Kundu, J., et al.
Published: (2007)

Simulation of X-Ray Diffraction Spectra for AlN/GaN Multiple Quantum Well Structures on AlN(0001) with Interface Roughness and Variation of Vertical Layers Thickness
by: Liubchenko, O.I., et al.
Published: (2018)

Влияние протонного облучения на AlGaN/GaN транзисторы c высокой подвижностью электронов
by: Батаев, М., et al.
Published: (2011)

Electron transport in AlGaN/GaN HEMT-like nanowires: Effect of depletion and UV excitation
by: Naumov, A.V., et al.
Published: (2021)

Theory of the shear acoustic phonons spectrum and their interactionwith electrons due to the piezoelectric potential in AlN/GaN nanostructures of plane symmetry
by: I. V. Boyko, et al.
Published: (2021)

Контакти з бар’єром Шотткі Au–TiBx–n-GaN
by: Кудрик, Р.Я.
Published: (2015)

MODELLING OF OPERATION MODES AND ELECTROMAGNETIC INTERFERENCES OF GaN-TRANSISTOR CONVERTERS
by: Onikienko, Y. O., et al.
Published: (2020)

Influence of weak magnetic fields treatment on photoluminescence of GaN:Si
by: S. M. Redko
Published: (2015)

Electrophysical сharacteristics of LEDs based on GaN epitaxial films
by: Oleksenko, P.Ph., et al.
Published: (1998)

Influence of treatment in weak magnetic fields on photoluminescence of GaN:Si
by: Red’ko, S.M.
Published: (2015)