Структура чистих Si−Si, Ge−Ge та змішаних аддимерів Si−Ge на поверхні Si(001)

The adsorption of Ge on the Si(001) surface has been studied using ab initio quantum chemical (QM) and combined quantum-chemical–molecular-mechanical (QM/MM) cluster calculations. Multiconfigurational self-consistent field calculations that took the configuration interaction into account were perfor...

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Bibliographische Detailangaben
Datum:2022
Hauptverfasser: Afanasieva, T.V., Greenchuck, A.A., Koval, I.P., Nakhodkin, M.G.
Format: Artikel
Sprache:Ukrainian
English
Veröffentlicht: Publishing house "Academperiodika" 2022
Schlagworte:
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Online Zugang:https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2022119
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Назва журналу:Ukrainian Journal of Physics

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Ukrainian Journal of Physics