Поверхнева фото-ерс структур Au−C60−Si
The methods of surface photovoltage, photoluminescence, AFM, and FTIR are applied to studying the Au–C60–Si structure. The surface photovoltage kinetics was also investigated. It is shown that the photoluminescence and the surface photovoltage in the range 1.3–1.8 eV are caused by optical transition...
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| Datum: | 2022 |
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| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | Ukrainian English |
| Veröffentlicht: |
Publishing house "Academperiodika"
2022
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| Schlagworte: | |
| Online Zugang: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2022122 |
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| Назва журналу: | Ukrainian Journal of Physics |
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Ukrainian Journal of Physics| Zusammenfassung: | The methods of surface photovoltage, photoluminescence, AFM, and FTIR are applied to studying the Au–C60–Si structure. The surface photovoltage kinetics was also investigated. It is shown that the photoluminescence and the surface photovoltage in the range 1.3–1.8 eV are caused by optical transitions with participation of singlet and triplet exciton states. It is established that thegeneration of surface photovoltage in the Au–C60–Si structure is caused by the spatial separation of electron-hole pairs in theC60 film. |
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