Поверхнева фото-ерс структур Au−C60−Si
The methods of surface photovoltage, photoluminescence, AFM, and FTIR are applied to studying the Au–C60–Si structure. The surface photovoltage kinetics was also investigated. It is shown that the photoluminescence and the surface photovoltage in the range 1.3–1.8 eV are caused by optical transition...
Gespeichert in:
| Datum: | 2022 |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | Ukrainisch Englisch |
| Veröffentlicht: |
Publishing house "Academperiodika"
2022
|
| Schlagworte: | |
| Online Zugang: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2022122 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Ukrainian Journal of Physics |
Institution
Ukrainian Journal of Physics| _version_ | 1863131461641568256 |
|---|---|
| author | Kozachenko, V.V. Kondratenko, S.V. Melnichuk, Ye.Ye. Datsenko, O.I. Tsibrii, Z.F. |
| author_facet | Kozachenko, V.V. Kondratenko, S.V. Melnichuk, Ye.Ye. Datsenko, O.I. Tsibrii, Z.F. |
| author_sort | Kozachenko, V.V. |
| baseUrl_str | https://ujp.bitp.kiev.ua/index.php/ujp/oai |
| collection | OJS |
| datestamp_date | 2022-02-16T08:10:53Z |
| description | The methods of surface photovoltage, photoluminescence, AFM, and FTIR are applied to studying the Au–C60–Si structure. The surface photovoltage kinetics was also investigated. It is shown that the photoluminescence and the surface photovoltage in the range 1.3–1.8 eV are caused by optical transitions with participation of singlet and triplet exciton states. It is established that thegeneration of surface photovoltage in the Au–C60–Si structure is caused by the spatial separation of electron-hole pairs in theC60 film. |
| doi_str_mv | 10.15407/ujpe56.3.263 |
| first_indexed | 2025-10-02T01:18:31Z |
| format | Article |
| id | ujp2-article-2022122 |
| institution | Ukrainian Journal of Physics |
| keywords_txt_mv | keywords |
| language | Ukrainian English |
| last_indexed | 2025-10-02T01:18:31Z |
| publishDate | 2022 |
| publisher | Publishing house "Academperiodika" |
| record_format | ojs |
| spelling | ujp2-article-20221222022-02-16T08:10:53Z Surface Photovoltage of Au−C60−Si Structures Поверхнева фото-ерс структур Au−C60−Si Kozachenko, V.V. Kondratenko, S.V. Melnichuk, Ye.Ye. Datsenko, O.I. Tsibrii, Z.F. - - The methods of surface photovoltage, photoluminescence, AFM, and FTIR are applied to studying the Au–C60–Si structure. The surface photovoltage kinetics was also investigated. It is shown that the photoluminescence and the surface photovoltage in the range 1.3–1.8 eV are caused by optical transitions with participation of singlet and triplet exciton states. It is established that thegeneration of surface photovoltage in the Au–C60–Si structure is caused by the spatial separation of electron-hole pairs in theC60 film. У роботі методами спектроскопії поверхневої фото-ерс, фото-люмінесценції, AFM та FTIR досліджено структуру Au–C60–Si. Досліджено також кінетику поверхневої фото-ерс. Показано, що фотолюмінесценція та поверхнева фото-ерс в інтервалі 1,3–1,8 еВ зумовлені оптичними переходами за участі синглетних та триплетних екситонних станів. Встановлено, що генерація поверхневої фото-ерс у структурі Au–C60–Si зумовлена просторовим розділенням електронно-діркових пар в плівці C60. Publishing house "Academperiodika" 2022-02-15 Article Article Peer-reviewed Рецензована стаття application/pdf application/pdf https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2022122 10.15407/ujpe56.3.263 Ukrainian Journal of Physics; Vol. 56 No. 3 (2011); 263 Український фізичний журнал; Том 56 № 3 (2011); 263 2071-0194 2071-0186 10.15407/ujpe56.3 uk en https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2022122/2375 https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2022122/2376 |
| spellingShingle | - Kozachenko, V.V. Kondratenko, S.V. Melnichuk, Ye.Ye. Datsenko, O.I. Tsibrii, Z.F. Поверхнева фото-ерс структур Au−C60−Si |
| title | Поверхнева фото-ерс структур Au−C60−Si |
| title_alt | Surface Photovoltage of Au−C60−Si Structures |
| title_full | Поверхнева фото-ерс структур Au−C60−Si |
| title_fullStr | Поверхнева фото-ерс структур Au−C60−Si |
| title_full_unstemmed | Поверхнева фото-ерс структур Au−C60−Si |
| title_short | Поверхнева фото-ерс структур Au−C60−Si |
| title_sort | поверхнева фото-ерс структур au−c60−si |
| topic | - |
| topic_facet | - - |
| url | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2022122 |
| work_keys_str_mv | AT kozachenkovv surfacephotovoltageofauc60sistructures AT kondratenkosv surfacephotovoltageofauc60sistructures AT melnichukyeye surfacephotovoltageofauc60sistructures AT datsenkooi surfacephotovoltageofauc60sistructures AT tsibriizf surfacephotovoltageofauc60sistructures AT kozachenkovv poverhnevafotoersstrukturauc60si AT kondratenkosv poverhnevafotoersstrukturauc60si AT melnichukyeye poverhnevafotoersstrukturauc60si AT datsenkooi poverhnevafotoersstrukturauc60si AT tsibriizf poverhnevafotoersstrukturauc60si |