Радіаційно-стимульована перебудова дефектів у кристалах кремнію
Physical and mathematical models of the radiation-induced ordering of a defect structure in silicon crystals are proposed. Thesemodels involve an increase of the diffusion coefficient of interstitial silicon in the irradiation field and a reduction of the defect lifetime at irradiation doses below 2...
Збережено в:
| Дата: | 2022 |
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| Автори: | , , , , , , |
| Формат: | Стаття |
| Мова: | Ukrainian English |
| Опубліковано: |
Publishing house "Academperiodika"
2022
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| Теми: | |
| Онлайн доступ: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2022155 |
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| Назва журналу: | Ukrainian Journal of Physics |
Репозитарії
Ukrainian Journal of Physics| Резюме: | Physical and mathematical models of the radiation-induced ordering of a defect structure in silicon crystals are proposed. Thesemodels involve an increase of the diffusion coefficient of interstitial silicon in the irradiation field and a reduction of the defect lifetime at irradiation doses below 260 Gy. Free surfaces of crystals, phase interfaces, and dislocations are considered to be effective defect sinks. |
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