Радіаційно-стимульована перебудова дефектів у кристалах кремнію

Physical and mathematical models of the radiation-induced ordering of a defect structure in silicon crystals are proposed. Thesemodels involve an increase of the diffusion coefficient of interstitial silicon in the irradiation field and a reduction of the defect lifetime at irradiation doses below 2...

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Bibliographic Details
Date:2022
Main Authors: Pavlyk, B.V., Lys, R.M., Hrypa, A.S., Slobodzyan, D.P., Khvyshchun, I.O., Shykoryak, I.A., Didyk, R.I.
Format: Article
Language:Ukrainian
English
Published: Publishing house "Academperiodika" 2022
Subjects:
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Online Access:https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2022155
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Journal Title:Ukrainian Journal of Physics

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Ukrainian Journal of Physics