Радіаційно-стимульована перебудова дефектів у кристалах кремнію
Physical and mathematical models of the radiation-induced ordering of a defect structure in silicon crystals are proposed. Thesemodels involve an increase of the diffusion coefficient of interstitial silicon in the irradiation field and a reduction of the defect lifetime at irradiation doses below 2...
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| Date: | 2022 |
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| Main Authors: | , , , , , , |
| Format: | Article |
| Language: | Ukrainian English |
| Published: |
Publishing house "Academperiodika"
2022
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| Subjects: | |
| Online Access: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2022155 |
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| Journal Title: | Ukrainian Journal of Physics |