Збагачені міддю наноструктуровані провідні термоелектричні плівки йодиду міді(I), отримані на гнучких підкладинках методом хімічного осадження з розчину

• Datum: 2024
• Hauptverfasser: Klochko, N.P., Kopach, V.R., Petrushenko, S.I., Shepotko, E.M., Dukarov, S.V., Sukhov, V.M., Khrypunova, A.L.
• Format: Artikel
• Sprache: English
• Veröffentlicht: Publishing house "Academperiodika" 2024
• Schlagworte: купрум(I) йодид; термоелектрика; транспорт носiїв заряду; наноструктура; тонка плiвка; процес хiмiчного осадження з розчинiв
• Online Zugang: https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2023107
• Назва журналу: Ukrainian Journal of Physics

The objects of our research are flexible thin-film thermoelectric materials with nanostructured CuI layers 0.5–1.0 μm thick, fabricated by the chemical solution method Successive Ionic Layer Adsorption and Reaction (SILAR) on flexible polyethylene terephthalate and polyimide substrates. These cubic γ-CuI films differ from films obtained by other chemical solution methods, such as spin-coating, sputtering, and inject printing, in their low resistivity due to acceptor impurities of sulfur and oxygen introduced into CuI from aqueous precursor solutions during SILAR deposition. Energy barriers at the boundaries of 18–22 nm CuI nanograins and a large number of charge carriers inside the nanograins determine the transport properties in the temperature interval 295–340 K characterized by transitions from semiconductor to metallic behavior with increasing temperature, which are typical of nanostructured degenerate semiconductors. Due to the resistivity of about 0.8 mΩ· m at 310 K and the Seebeck coefficient 101 μV/K, the thermoelectric power factor of the CuI film 1.0 μm thick on the polyimide substrate is 12.3 μW/(m · K2), which corresponds to modern thin-film p-type thermoelectric materials. It confirms the suitability of CuI films obtained by the SILAR method for the fabrication of promising inexpensive non-toxic flexible thermoelectric materials.