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Часи життя носіїв заряду у вузькощілинному Hg1–xCdxTe при міжзонному та внутрішньозонному збудженні

The lifetimes of photoconductive decay carriers under interband and intraband excitations are studied in epitaxial layers of narrow-gap Hg1−xCdxTe (x ∼0.2). Samples with large distances (&gt;3 mm) between small-area electrical contacts and small distances (∼10 μm) with largearea contacts (THz an...

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Bibliographic Details
Main Authors: Staryi, S., Lysjuk, I., Golenkov, O., Tsybrii, Z., Danilov, S., Gumenjuk-Sichevska, J., Andrieieva, K., Smolii, M., Sizov, F.
Format: Article
Language:English
Published: Publishing house "Academperiodika" 2023
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Online Access:https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2023114
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Summary:The lifetimes of photoconductive decay carriers under interband and intraband excitations are studied in epitaxial layers of narrow-gap Hg1−xCdxTe (x ∼0.2). Samples with large distances (&gt;3 mm) between small-area electrical contacts and small distances (∼10 μm) with largearea contacts (THz antennas) are studied. The lifetimes of decay carriers for intraband and interband excitations are measured and compared. It has been established that, in samples with n-type conductivity, the lifetimes are comparable (in the interval of 40 ns) for both methods of excitation. At the same time, in samples with a small distance between contacts and a large area (bow-tie antennas), contacts make the main contribution to recombination. The elimination of recombination at the contacts leads to a lifetime of ∼10−6 s.