Зменшення рекомбінаційних втрат у дифузійних приповерхневих емітерних шарах фоточутливих кремнієвих структур n+-p-p+
When creating an n+-emitter in photosensitive structures of the n+-p-p+ type, the structure of its near-surface layer after the diffusion operation is found to be substantially damaged with increased recombination losses. The influence of additional growing-etching cycles of the silicon dioxide laye...
Збережено в:
| Дата: | 2023 |
|---|---|
| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English Ukrainian |
| Опубліковано: |
Publishing house "Academperiodika"
2023
|
| Теми: | |
| Онлайн доступ: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2023178 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Ukrainian Journal of Physics |
Репозитарії
Ukrainian Journal of Physics| Резюме: | When creating an n+-emitter in photosensitive structures of the n+-p-p+ type, the structure of its near-surface layer after the diffusion operation is found to be substantially damaged with increased recombination losses. The influence of additional growing-etching cycles of the silicon dioxide layer on the emitter surface when manufacturing such photosensitive silicon structures on their photoelectric and recombination characteristics is studied. It is shown that the application of such an additional treatment in the production of photosensitive silicon structures allows the recombination losses to be effectively reduced and, thereby, the photovoltaic parameters of such structures, including their spectral and threshold photosensitivities, to be significantly improved. |
|---|