Рекомбінація та прилипання нерівноважних носіїв в n-InSb
The effect of trapping on the transient and steady-state lifetimes of excess carriers is investigated in InSb of n-type conductivity. Photoconductive decay and direct current measurements are used to characterize the starting material and infrared photodiodes. The large difference between the transi...
Збережено в:
| Дата: | 2024 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Publishing house "Academperiodika"
2024
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| Теми: | |
| Онлайн доступ: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2023240 |
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| Назва журналу: | Ukrainian Journal of Physics |
Репозитарії
Ukrainian Journal of Physics| Резюме: | The effect of trapping on the transient and steady-state lifetimes of excess carriers is investigated in InSb of n-type conductivity. Photoconductive decay and direct current measurements are used to characterize the starting material and infrared photodiodes. The large difference between the transient and steady-state lifetimes is explained by the trapping of minority carriers at the acceptor centers within the two-level recombination model. The recombination parameters of the traps are estimated. |
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