Рекомбінація та прилипання нерівноважних носіїв в n-InSb

The effect of trapping on the transient and steady-state lifetimes of excess carriers is investigated in InSb of n-type conductivity. Photoconductive decay and direct current measurements are used to characterize the starting material and infrared photodiodes. The large difference between the transi...

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Bibliographic Details
Date:2024
Main Authors: Tetyorkin, V.V., Tkachuk, A.I., Lutsyshyn, I.G.
Format: Article
Language:English
Published: Publishing house "Academperiodika" 2024
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Online Access:https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2023240
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Journal Title:Ukrainian Journal of Physics

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Ukrainian Journal of Physics