Рекомбінація та прилипання нерівноважних носіїв в n-InSb

• Date: 2024
• Main Authors: Tetyorkin, V.V., Tkachuk, A.I., Lutsyshyn, I.G.
• Format: Article
• Language: English
• Published: Publishing house "Academperiodika" 2024
• Subjects: InSb; нерiвноважнi носiї; час життя; рекомбiнацiя; прилипання; iнфрачервонi фотодiоди
• Online Access: https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2023240
• Journal Title: Ukrainian Journal of Physics

The effect of trapping on the transient and steady-state lifetimes of excess carriers is investigated in InSb of n-type conductivity. Photoconductive decay and direct current measurements are used to characterize the starting material and infrared photodiodes. The large difference between the transi...