Феромагнетизм напівметалевих нанолистів GaN, легованих ванадієм, та його застосування у спінтронних пристроях
The density functional theory calculations using general gradient approximation (GGA) have been systematically performed to study the electronic structures, the density of states (DOS), and magnetic properties of V-doped GaN nanosheet for different dopant concentrations (2.08% and 4.16%). We conduct...
Збережено в:
| Дата: | 2024 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English Ukrainian |
| Опубліковано: |
Publishing house "Academperiodika"
2024
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| Теми: | |
| Онлайн доступ: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2023346 |
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| Назва журналу: | Ukrainian Journal of Physics |
Репозитарії
Ukrainian Journal of Physics| Резюме: | The density functional theory calculations using general gradient approximation (GGA) have been systematically performed to study the electronic structures, the density of states (DOS), and magnetic properties of V-doped GaN nanosheet for different dopant concentrations (2.08% and 4.16%). We conducted the entire study using the Atomistixtool kit code. The electronic properties were improved with the Hubbard values U = 4 eV. V-doped CaN nanosheet exhibits stable ferromagnetic (FM) states relative to corresponding antiferromagnetic (AFM) states. The calculated TC with the V-doping is found to be above the room temperature (RT) one. Calculation results reveal that V-doped nanosheets may be a good candidates for spintronics due to its good half-metal ferromagnetism. |
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