Механізми електропровідності напівпровідника Tm1 – xVxNiSb
The structural, thermodynamic, kinetic, and energy characteristics of the Tm1−xVxNiSb semiconductor are studied over T = 80–400 K and 0 ≤ x ≤ 0.10. The present study demonstrates that the crystal structure of TmNiSb is disordered and contains up to 2% of vacancies at the 4a crystallographic site (Tm...
Збережено в:
| Дата: | 2024 |
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| Автори: | , , , , , , |
| Формат: | Стаття |
| Мова: | English Ukrainian |
| Опубліковано: |
Publishing house "Academperiodika"
2024
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| Теми: | |
| Онлайн доступ: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2023390 |
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| Назва журналу: | Ukrainian Journal of Physics |
Репозитарії
Ukrainian Journal of Physics| Резюме: | The structural, thermodynamic, kinetic, and energy characteristics of the Tm1−xVxNiSb semiconductor are studied over T = 80–400 K and 0 ≤ x ≤ 0.10. The present study demonstrates that the crystal structure of TmNiSb is disordered and contains up to 2% of vacancies at the 4a crystallographic site (Tm atoms), which are gradually filled with V atoms up to x = 0.03 with further V for Tm substitution. The formation of two types of acceptor states with different depths of occurrence is experimentally determined: small acceptors generated by vacancies in the p-TmNiSb structure, and deep ones presumably formed by the vacancies at the Ni 4c site and correspond to the homogeneity region TmxNi1−xSb typical of other RNiSb half-Heusler phases. The results of the DFT modeling, including ground-state energy, distribution of the density of electronic states (DOS), and the band structure of Tm1−xVxNiSb, are consistent with experimental studies. |
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