Механізми електропровідності напівпровідника Tm1 – xVxNiSb
The structural, thermodynamic, kinetic, and energy characteristics of the Tm1−xVxNiSb semiconductor are studied over T = 80–400 K and 0 ≤ x ≤ 0.10. The present study demonstrates that the crystal structure of TmNiSb is disordered and contains up to 2% of vacancies at the 4a crystallographic site (Tm...
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| Date: | 2024 |
|---|---|
| Main Authors: | , , , , , , |
| Format: | Article |
| Language: | English Ukrainian |
| Published: |
Publishing house "Academperiodika"
2024
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| Subjects: | |
| Online Access: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2023390 |
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| Journal Title: | Ukrainian Journal of Physics |