Механізми електропровідності напівпровідника Tm1 – xVxNiSb

• Date: 2024
• Main Authors: Romaka, V.V., Romaka, V.A., Stadnyk, Yu.V., Romaka, L.P., Horyn, A.M., Demchenko, P.Yu., Pashkevych, V.Z.
• Format: Article
• Language: English; Ukrainian
• Published: Publishing house "Academperiodika" 2024
• Subjects: напiвгойслерiвськi фази; рiвень Фермi; електронна структура; електроопiр; коефiцiєнт термоелектрорушiйної сили
• Online Access: https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2023390
• Journal Title: Ukrainian Journal of Physics

The structural, thermodynamic, kinetic, and energy characteristics of the Tm1−xVxNiSb semiconductor are studied over T = 80–400 K and 0 ≤ x ≤ 0.10. The present study demonstrates that the crystal structure of TmNiSb is disordered and contains up to 2% of vacancies at the 4a crystallographic site (Tm...