Оже-рекомбінація в полярних InGaN/GaN квантових ямах
Auger recombination rate in polar InxGa1−xN/GaN quantum wells has been calculated in the framework of the full-band model. The key components of the model are the band structures of bulk binary nitrides (GaN and InN) obtained by the empirical pseudopotential method and the band structures of InxGa1−...
Збережено в:
| Дата: | 2025 |
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| Автори: | , |
| Формат: | Стаття |
| Мова: | English Ukrainian |
| Опубліковано: |
Publishing house "Academperiodika"
2025
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| Теми: | |
| Онлайн доступ: | https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2023703 |
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| Назва журналу: | Ukrainian Journal of Physics |
Репозитарії
Ukrainian Journal of Physics| Резюме: | Auger recombination rate in polar InxGa1−xN/GaN quantum wells has been calculated in the framework of the full-band model. The key components of the model are the band structures of bulk binary nitrides (GaN and InN) obtained by the empirical pseudopotential method and the band structures of InxGa1−xN/GaN quantum wells (with various alloy compositions x) obtained by the linear combination of bulk bands. The dependence of the Auger recombination coefficients on the band gap, quantum well thickness, and carrier concentration has been calculated. The results obtained show that the band-gap dependences of the Auger coefficients for quantum wells are much weaker than in the case of bulk InxGa1−xN alloys. The dependence of the Auger coefficients on the quantum well width has a strong oscillatory character. At high carrier concentrations, a significant decrease in the Auger coefficients is observed, which we attribute to the influence of the Fermi statistics on the carrier population distribution over the quantum states. |
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