Оже-рекомбінація в полярних InGaN/GaN квантових ямах

• Date: 2025
• Main Authors: Zinovchuk, A.V., Slipokurov, V.S.
• Format: Article
• Language: English; Ukrainian
• Published: Publishing house "Academperiodika" 2025
• Subjects: InGaN квантовi ями; оже-рекомбiнацiя; поляризацiя
• Online Access: https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2023703
• Journal Title: Ukrainian Journal of Physics

Auger recombination rate in polar InxGa1−xN/GaN quantum wells has been calculated in the framework of the full-band model. The key components of the model are the band structures of bulk binary nitrides (GaN and InN) obtained by the empirical pseudopotential method and the band structures of InxGa1−...