Про механізм збудження гібридних плазмон-поляритонів у напівпровідниках

• Datum: 2025
• Hauptverfasser: Chepilko, M.M., Bobkov, Yu.V., Ponomarenko, S.A.
• Format: Artikel
• Sprache: Englisch; Ukrainisch
• Veröffentlicht: Publishing house "Academperiodika" 2025
• Schlagworte: електрони; дiрки; електричне поле; поляризацiя; густина електричного струму; плазмонна частота; просторова дисперсiя; дисперсiйне рiвняння; нестiйкiсть; об’ємнi плазмони; поверхневi плазмони; об’ємнi поляритони; поверхневi поляритони; iнкремент зростання; декремент спадання
• Online Zugang: https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2023732
• Назва журналу: Ukrainian Journal of Physics

The influence of direct current on the dynamics of plasmon-polaritons in semiconductors has been analyzed. It is shown that the counter motion of macroscopic continua of electrons and holes induced by an external electromotive force leads to the appearance of unstable additional hybrid bulk and surface plasmons, as well as plasmon-polaritons, which are “genetically” related to both electrons and holes. The dispersion law and the increment and decrement of the amplitudes of the dynamic variables of additional hybrid plasmons and plasmon-polaritons are demonstrated to substantially depend on the stationary motion velocity of charged particles associated with the constant direct current. It is shown that one of the solutions of the dispersion equation for surface plasmon-polaritons corresponds to “exotic” bulk plasmon-polaritons, which propagate from the air-semiconductor interface into the depth of contacting media. The instability of additional hybrid plasmons and plasmon-polaritons can be used as the basis for a simple method of excitating additional hybrid plasmons and plasmon-polaritons in semiconductors.