Cyclotron radiation of semiconductor crystals von Milenin, G.V., Milenin, V.V., Red'ko, R.A.

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Dose dependence of tensoresistance for the symmetrical orientation of the deformation axis relatively to all isoenergetic ellipsoids in γ-irradiated (⁶⁰Co) n-Si crystals von Gaidar, G.P.

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Influence of the mirror image forces on dispersion and phonon acoustic mode width of quasi-Rayleigh wave interacting with the adsorbed atoms von Seneta, M.Ya., Peleshchak, R.M., Brytan, V.B.

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Physical mechanisms providing formation of ohmic contacts, metal-semiconductor (Review) von Sachenko, A.V., Konakova, R.V., Belyaev, A.Ye.

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Features of electrochemical processes at the boundary p-GaAs-HF water solution von Pashchenko, G.A., Kravetskyi, M.Yu., Trishchuk, L.I.

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Studying the mechanical properties of (Cu₁₋ₓAgₓ)₇GeS₅I mixed crystals by using the micro-indentation method von Bilanych, V.V., Bendak, A.V., Skubenych, K.V., Pogodin, A.I., Bilanych, V.S., Studenyak, I.P.

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Semiconductor surface spectroscopy using transverse acousto-electric effect: Role of surface charge in photo-processes at ZnS/Si interface von Tatyanenko, N.P., Roshchina, N.N., Gromashevskii, V.L., Svechnikov, G.S., Zavyalova, L.V., Snopok, B.A.

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Current and electroluminescence intensity oscillations under bipolar lateral electric transport in the double-GaAs/InGaAs/GaAs quantum wells von Vinoslavskii, M.M., Belevskii, P.A., Poroshin, V.M., Pilipchuk, O.S., Kochelap, V.O.

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Electron and hole effective masses in heavily boron-doped silicon nanostructures determined using cyclotron resonance experiments von Savchenko, D.V., Kalabukhova, E.N., Shanina, B.D., Bagraev, N.T., Klyachkin, L.E., Malyarenko, A.M., Khromov, V.S.

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Inversion of spin levels in exchange-coupled pairs under combined time reversal von Geru, I.I.

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Condensons and bicondensons in a one-dimensional systems von Kashirina, N.I., Korol, O.A.

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Calculation of spin-Hamiltonian constants for extended defects (Vsᵢ-Vc)⁰ (Ky5) in silicon carbide polytype 3C-SiC von Shanina, B.D., Bratus', V.Ya.

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Empirical prediction of thermal properties, microhardness and sound velocity of cubic zinc-blende AlN von Daoud, S.

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Conduction mechanisms of the reverse leakage current of β-Ga₂O₃ Schottky barrier diodes von Latreche, A.

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Conductivity of molecular semiconductor material based on monomeric and polymeric methacroylacetophenone von Berezhnytska, O.S., Trunova, O.K., Gudyma, А.О., Smirnov, А.B., Okhrimenko, O.B., Bacherikov, Yu.Yu.

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Influence of anion substitution on electrical conductivity of composites based on liquid crystal with Cu₆PS₅X (X = I, Br) nanoparticles von Studenyak, I.P., Kovalchuk, O.V., Poberezhets, S.I., Timko, M., Kopcansky, P.

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Features of structural changes in mosaic Ge:Sb according to X-ray diffractometry and electron backscatter diffraction data von Borcha, M.D., Solodkyi, M.S., Balovsyak, S.V., Tkach, V.M., Hutsuliak, I.I., Kuzmin, A.R., Tkach, O.O., Kladko, V.P., Gudymenko, O.Yo., Liubchenko, О.І., Swiatek, Z.

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Transformation of defects in semiconductor structures under the influence of microwave electromagnetic radiation, which is stimulated by drift phenomena von Milenin, G.V., Redko, R.A.

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Sensory features of thiacalix[4]arene molecules towards volatile halogen-aromatic compounds von Kazantseva, Z.I., Koshets, I.A., Zaharenko, O.M., Kharchenko, S.G., Kalchenko, V.I.

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Influence of cation substitution on the mechanical properties of (Cu₁₋ₓAgₓ)₇GeSe₅I mixed crystals and composites on their base von Bendak, A.V., Skubenych, K.V., Pogodin, A.I., Bilanych, V.S., Kranjcec, M., Studenyak, I.P.

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