Radiative recombination in initial and electron-irradiated GaP crystals von Hontaruk, O., Konoreva, O., Litovchenko, P., Manzhara, V., Opilat, V., Pinkovska, M., Tartachnyk, V.

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Феномени “опозиційної ідеології“ та “ідеології опозиційності“ von Лага, В.

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Electron-hole Fermi liquid in nanosized semiconductor structures von Litovchenko, V.G., Grygoriev, A.A.

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Ultrasonic assisted nanomanipulations with atomic force microscope von Lytvyn, P.M., Olikh, O.Ya., Lytvyn, O.S., Dyachyns’ka, O.M., Prokopenko, I.V.

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Photoluminescent properties of crystalline solid solution Zn₁₋ xMgxSe:Cr²⁺, a new active material for tunable IR lasers von Kovalenko, N.O., Zagoruiko, Yu.A., Fedorenko, O.O., Kuzminov, E.A.

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Li-Bi-Se semiconductor thin films: technology, structure and electrophysical properties von Bilozertseva, V.I., Khlyap, H.M., Shkumbatyuk, P.S., Dyakonenko, N.L., Mamaluy, A.O., Gaman, D.O.

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Optical transmittance of carbon suspensions in polymer matrixes under powerful pulsed laser irradiation von Zelensky, S.E., Kopyshinsky, O.V., Garashchenko, V.V., Kolesnik, A.S., Stadnytskyi, V.M., Zelenska, K.S., Shynkarenko, Ye .V.

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Genesis of initial defects in the process of monocrystalline silicon oxidation with subsequent scribing von Smyntyna, V.A., Sviridova, O.V.

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Acoustic emission and fluctuations of electroluminescence intensity in light-emitting heterostructures von Veleschuk, V.P., Lyashenko, O.V., Vlasenko, Z.K., Kysselyuk, M.P.

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Method and estimation of parameters of dense part of double electrical layer at the interface electrode-solution of the dye in liquid crystal von Kovalchuk, O.V.

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Polarization conversion effect in obliquely deposited SiOx films von Sopinskyy, M.V., Indutnyi, I.Z., Michailovska, K.V., Shepeliavyi, P.E., Tkach, V.M.

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Optical properties of the Ti surface structured by femtosecond laser beam von Dolgov, L., Kravchuk, R., Rybak, A., Kiisk, V., Sildos, I., Blonskyi, I.

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Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals von Studenyak, I.P., Izai, V.Yu., Stephanovich, V.О., Panko, V.V., Kúš, P., Plecenik, A., Zahoran, M., Greguš, J., Roch, T.

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Optical absorption edge and luminescence in phosphorous-implanted Cu₆PS₅X (X = I, Br) single crystals von Studenyak, I.P., Izai, V.Yu., Stephanovich, V.О., Panko, V.V., Kúš, P., Plecenik, A., Zahoran, M., Greguš, J., Roch, T.

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Effect of magnetic field on the reconstruction of the defect-impurity state and сathodoluminescence in Si/SiO₂ structure von Steblenko, L.P., Koplak, O.V., Syvorotka, I.I., Kravchenko, V.S.

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Laser oscillation in Cr²⁺:ZnS waveguide thin-film structures under electrical pumping with impact excitation mechanism von Vlasenko, N.A., Oleksenko, P.F., Mukhlyo, M.O., Lytvyn, P.M., Veligura, L.I., Denisova, Z.L.

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Changes in Hall parameters after γ-irradiation (⁶⁰Со) of n-Ge von Gaidar, G.P.

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Anti-reflection coatings based on SnO₂, SiO₂, Si₃N₄ films for photodiodes operating in ultraviolet and visible spectral ranges von Dobrovolskiy, Yu.G., Perevertailo, V.L., Shabashkevich, B.G.

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Diluted magnetic layered semiconductor InSe:Mn with high Curie temperature von Lashkarev, G.V., Sichkovskyi, V.I., Radchenko, M.V., Aleshkevych, P., Dmitriev, O.I., Butorin, P.E., Kovalyuk, Z.D., Szymczak, R., Slawska-Waniewska, A., Nedelko, N., Yakiela, R., Balagurov, A.M., Beskrovnyy, A.I., Dobrowolsk, W.

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Size effects in p-PbTe nanostructures on polyamide von Freik, D.M., Yurchyshyn, I.K., Potyak, V.Yu., Lysiuk, Yu.V.

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